Published Paper Details:

Pure CdS and In-doped CdS thin films were deposited using simplified 2-electrode electrochemical deposition technique and investigated using cyclic voltammetry, XRD, UV-Visible spectroscopy and Hall Effect by vander pauw method. 1%, 2%, and 3% 0.1 M InCl3 was used for In-doping. The effect of In-doping on dislocation density and microstrain has been estimated from XRD data. Absorption, transmittance, and refractive index were investigated in spectral range 200-1100 nm by variation upon In-doping. The band gap was found to decrease from 2.40 to 2.20 eV with increase in In-content from 1% to 2%, and increases about 2.26 eV at increase in In-content from 2% to 3%. 2% In-content in CdS thin film show highest transparency due to low refractive index at wavelength 565 nm in visible region. The electrical resistivity, carrier concentration, mobility, and hall coefficient were directly estimated by vander pauw method. In-doped CdS thin film show n-type electrical conductivity and it may be further used as window layer in thin film solar cell.