Published Paper Details:

Soft errors caused by radiation in the aerospace industry pose a significant threat to the reliability of SRAM cells, particularly as technology continues to scale down. To mitigate this challenge, this study proposes a novel Soft-Error-Aware 16T (S8P8N) SRAM cell specifically designed for aerospace applications. The proposed cell is evaluated against existing architectures, including 6T, DICE, QUCCE12T, WEQUATRO, RHBD10T, RHBD12T, S4P8N, SEA14T, and SRRD12T, demonstrating its superior resilience to single-event upsets (SEUs) and multinode upsets. Simulation results show that all vulnerable nodes and critical node pairs in the S8P8N cell effectively recover to their original states after experiencing a soft error. The proposed cell also offers improved protection against key multinode upsets. Despite its enhanced error recovery capabilities, the write speed of the proposed cell is reduced by 20.3%, 50.1%, 74.1%, 63.7%, and 50.41% compared to 6T, DICE, QUCCE12T, WEQUATRO, and RHBD10T, respectively. Similarly, the read speed shows a reduction of 56.6%, 52.2%, 62.5%, and 35.2% when compared to 6T, SRRD12T, RHBD12T, and S4P8N, respectively. However, the read static noise margin (RSNM) is significantly improved by 157%, 67%, and 32% when compared to RHBD12T, SEA14T, and SRRD12T. Furthermore, the hold power of the proposed cell is reduced by 14.1%, 13.8%, 17.7%, and 23.4% compared to DICE, WEQUATRO, RHBD10T, and RHBD12T. These improvements are achieved with a minimal area penalty, making the S8P8N cell a promising solution for enhancing the reliability of SRAMs in radiation-prone environments such as aerospace applications.