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Paper Title
A Review on Semiconductor Chalcogenide Thin Films: Properties, Fabrication, and Applications
Authors
Jitendra Borse
Keywords
Chalcogenide thin films, semiconductor, CdSe, SnS, CuInSe?, photovoltaics, thermoelectric, doping, chemical synthesis, band gap engineering
Abstract
Chalcogenide semiconductor thin films, comprising elements from Group VI (S, Se, Te) and Groups IV-VI metals (e.g., Cd, Pb, Sn, In, Cu, Ga), have gained immense attention for their versatile optical and electrical properties. These materials exhibit a tunable band gap, high absorption coefficients, and cost-effective fabrication, making them suitable for diverse applications, including photovoltaics, photo detectors, thermoelectric, and phase-change memory devices. This review provides a comprehensive summary of the synthesis techniques, structural and optoelectronic properties, and emerging applications of key chalcogenide thin films such as CdSe, CdTe, SnS, CuInSe?, and GeTe. Emphasis is placed on how doping, nanostructuring, and fabrication processes influence film characteristics and performance. The review concludes with current challenges and future prospects in this rapidly evolving field.
IJCRT's Publication Details
Unique Identification Number - IJCRT2507326
Paper ID - 291033
Page Number(s) - c886-c890
Pubished in - Volume 13 | Issue 7 | July 2025
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Publisher Name - IJCRT | www.ijcrt.org | ISSN : 2320-2882
E-ISSN Number - 2320-2882
Cite this article
Jitendra Borse, "A Review on Semiconductor Chalcogenide Thin Films: Properties, Fabrication, and Applications", International Journal of Creative Research Thoughts (IJCRT), ISSN:2320-2882, Volume.13, Issue 7, pp.c886-c890, July 2025, Available at :http://www.ijcrt.org/papers/IJCRT2507326.pdf
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ISSN: 2320-2882 Impact Factor: 7.97 and ISSN APPROVED Journal Starting Year (ESTD) : 2013
ISSN and 7.97 Impact Factor Details
ISSN: 2320-2882 Impact Factor: 7.97 and ISSN APPROVED Journal Starting Year (ESTD) : 2013
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