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  Published Paper Details:

  Paper Title

STORAGE-BASED BUILT-IN SELF-TEST FOR GATE-EXHAUSTIVE FAULTS

  Authors

  Ms.Sanju Thasneem,  Mr.Gregorius Jose C

  Keywords

Built-in-self test, Data on-chip, Single cycle faults, Gate exhaustive test set

  Abstract


Built-in self-test (BIST ) approaches are suitable for in-field testing since they do not require a tester for storage and application of test data. They also reduce the security vulnerabilities associated with loading and unloading of external test data into scan chains. As technologies evolve, in-field testing needs to address more complex defect and fading mechanisms that require specific deterministic tests. This can be addressed by BIST approaches that store test data on-chip, and use the data for on-chip generation of both random and deterministic tests. In this case, there is a tradeoff between the amount of stored test data and the comprehensiveness of the test set that can be applied. This explores this tradeoff in a specific context that has the following main features. The initial stored test data is based on a stuck-at test set. The target faults are single-cycle gate-exhaustive faults. The stored test data is enhanced gradually by test data based on a gate-exhaustive test set to increase the coverage of gate-exhaustive faults.

  IJCRT's Publication Details

  Unique Identification Number - IJCRT22A6890

  Paper ID - 222649

  Page Number(s) - h232-h240

  Pubished in - Volume 10 | Issue 6 | June 2022

  DOI (Digital Object Identifier) -   

  Publisher Name - IJCRT | www.ijcrt.org | ISSN : 2320-2882

  E-ISSN Number - 2320-2882

  Cite this article

  Ms.Sanju Thasneem,  Mr.Gregorius Jose C,   "STORAGE-BASED BUILT-IN SELF-TEST FOR GATE-EXHAUSTIVE FAULTS", International Journal of Creative Research Thoughts (IJCRT), ISSN:2320-2882, Volume.10, Issue 6, pp.h232-h240, June 2022, Available at :http://www.ijcrt.org/papers/IJCRT22A6890.pdf

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ISSN: 2320-2882
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Journal Starting Year (ESTD) : 2013
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ISSN and 7.97 Impact Factor Details


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ISSN
ISSN: 2320-2882
Impact Factor: 7.97 and ISSN APPROVED
Journal Starting Year (ESTD) : 2013
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