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INTERNATIONAL JOURNAL OF CREATIVE RESEARCH THOUGHTS - IJCRT (IJCRT.ORG)

International Peer Reviewed & Refereed Journals, Open Access Journal

IJCRT Peer-Reviewed (Refereed) Journal as Per New UGC Rules.

ISSN Approved Journal No: 2320-2882 | Impact factor: 7.97 | ESTD Year: 2013

Call For Paper - Volume 14 | Issue 4 | Month- April 2026

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  Published Paper Details:

  Paper Title

IMPLEMENTATION OF VARIOUS LOW POWER TECHNIQUES IN A CMOS SRAM CELL

  Authors

  R. PRAKASH RAO

  Keywords

VLSI system, power dissipation, static power, dynamic power, sleep transistor technique, sleepy keeper process.

  Abstract


This work explores the new low power approaches for VLSI logic. While designing a VLSI system power dissipation is one of the major concerns. Up to a certain time dynamic power was the single largest concern; however as the technology feature size shrinks static power has become an important issue as dynamic power. A well-known previous technique called the sleep transistor technique cuts off Vdd and/or Gnd connections of transistors to save leakage power consumption. However, when transistors are allowed to float, a system may have to wait a long time to reliably restore lost state and thus may experience seriously degraded performance. Therefore, retaining state is crucial for a system that requires fast response even while in an inactive state. The two common approaches are sleepy stack and sleepy keeper. Both methods are excellent in this regard. The static and dynamic power of sleepy stack is considerably low. But it has a delay penalty and its area requirement is maximum compared with other processes. Again the sleepy keeper process possesses excellent speed criteria but it requires more static and dynamic power than sleepy stack. Our goal is to trade off between these limitations and thus propose new methods which reduce both leakage and dynamic power with minimum possible area and delay trade off.

  IJCRT's Publication Details

  Unique Identification Number - IJCRT1813480

  Paper ID - 189155

  Page Number(s) - 242-249

  Pubished in - Volume 6 | Issue 2 | APRIL 2018

  DOI (Digital Object Identifier) -   

  Publisher Name - IJCRT | www.ijcrt.org | ISSN : 2320-2882

  E-ISSN Number - 2320-2882

  Cite this article

  R. PRAKASH RAO ,   "IMPLEMENTATION OF VARIOUS LOW POWER TECHNIQUES IN A CMOS SRAM CELL", International Journal of Creative Research Thoughts (IJCRT), ISSN:2320-2882, Volume.6, Issue 2, pp.242-249, APRIL 2018, Available at :http://www.ijcrt.org/papers/IJCRT1813480.pdf

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Call For Paper April 2026
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ISSN and 7.97 Impact Factor Details


ISSN
ISSN
ISSN: 2320-2882
Impact Factor: 7.97 and ISSN APPROVED
Journal Starting Year (ESTD) : 2013
ISSN
ISSN and 7.97 Impact Factor Details


ISSN
ISSN
ISSN: 2320-2882
Impact Factor: 7.97 and ISSN APPROVED
Journal Starting Year (ESTD) : 2013
ISSN
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