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  Published Paper Details:

  Paper Title

ANALYSIS OF ALGAN/GAN FOR HIGH FREQUENCY APPLICATION USING HEMT TRANSISTOR

  Authors

  PRAMOD MARTHA,  RASHMI TIWARY,  ANKITA VISHWAKARMA

  Keywords

AlGaN/GaN HEMT transistor, threshold voltage curve, cross-sectional view of AlGaN/GaN HEMT, unity current gain cutoff frequency.

  Abstract


The performance of AlGaN/GaN high electron mobility transistor (HEMT) that were passivated with Si3N4 region at the gate terminal and simulated with Sapphire substrate . Output characteristics, transfer characteristics, threshold voltage and the cut off frequency of the device are observed. The device exhibits a threshold voltage VT= -4V, peak current is about 500mA, sub-threshold slope of 185mV/dec and unity current gain cut off frequency fT=73.6GHz. All simulations are made using SILVACO software.

  IJCRT's Publication Details

  Unique Identification Number - IJCRT1803008

  Paper ID - 183820

  Page Number(s) - 791-794

  Pubished in - Volume 6 | Issue 1 | March 2018

  DOI (Digital Object Identifier) -   

  Publisher Name - IJCRT | www.ijcrt.org | ISSN : 2320-2882

  E-ISSN Number - 2320-2882

  Cite this article

  PRAMOD MARTHA,  RASHMI TIWARY,  ANKITA VISHWAKARMA,   "ANALYSIS OF ALGAN/GAN FOR HIGH FREQUENCY APPLICATION USING HEMT TRANSISTOR", International Journal of Creative Research Thoughts (IJCRT), ISSN:2320-2882, Volume.6, Issue 1, pp.791-794, March 2018, Available at :http://www.ijcrt.org/papers/IJCRT1803008.pdf

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ISSN: 2320-2882
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Journal Starting Year (ESTD) : 2013
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ISSN and 7.97 Impact Factor Details


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ISSN
ISSN: 2320-2882
Impact Factor: 7.97 and ISSN APPROVED
Journal Starting Year (ESTD) : 2013
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