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INTERNATIONAL JOURNAL OF CREATIVE RESEARCH THOUGHTS - IJCRT (IJCRT.ORG)
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ISSN Approved Journal No: 2320-2882 | Impact factor: 7.97 | ESTD Year: 2013
Call For Paper - Volume 13 | Issue 11 | Month- November 2025
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Paper Title
INCORPORATION OF SILICON P-TYPE &NTYPE MATERIAL IN CHANNEL BOX FOR ENHANCEMENT OF DRIVING CURRENT AND BREAKDOWN VOLTAGE IN SOI- MESFET
Authors
PRAMOD MARTHA, GUDLA HARIKA, RASMI RANJANA DHEEBAR, GOPALSETTY DINESH
Keywords
SOI MESFET, impact ionization,self-heating effect
Abstract
This work reports a novel SOI MESFET including silicon N-type and P-type well inside the drift and buried oxide regions. The drift-diffusion equations along with the main physical models such as impact ionization, Shockley-Read-Hall and self-heating effect are carefully solved inside the structures. Modification of the potential profile occurs in the channel region and results in decrease in peak electric field. Output power density is successfully boosted owing to improved driving current and breakdown voltage, simultaneously. In addition self-heating effect is alleviated in the proposed structure due to decreased effective thermal resistance of the channel region. Comprehensive DC and AC performance comparisons show that the proposed device promises a more reliable candidate than the conventional SOI structure for high voltage applications.
IJCRT's Publication Details
Unique Identification Number - IJCRT1802891
Paper ID - 183833
Page Number(s) - 1446-1450
Pubished in - Volume 6 | Issue 1 | March 2018
DOI (Digital Object Identifier) -
Publisher Name - IJCRT | www.ijcrt.org | ISSN : 2320-2882
E-ISSN Number - 2320-2882
Cite this article
PRAMOD MARTHA, GUDLA HARIKA, RASMI RANJANA DHEEBAR, GOPALSETTY DINESH, "INCORPORATION OF SILICON P-TYPE &NTYPE MATERIAL IN CHANNEL BOX FOR ENHANCEMENT OF DRIVING CURRENT AND BREAKDOWN VOLTAGE IN SOI- MESFET", International Journal of Creative Research Thoughts (IJCRT), ISSN:2320-2882, Volume.6, Issue 1, pp.1446-1450, March 2018, Available at :http://www.ijcrt.org/papers/IJCRT1802891.pdf
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Volume 13 | Issue 11
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Submit Manuscript Online Impact Factor: 7.97 Review Results : Within 02-03 Days Paper Publication : Within 02-03 Days
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ISSN: 2320-2882 Impact Factor: 7.97 and ISSN APPROVED Journal Starting Year (ESTD) : 2013
ISSN and 7.97 Impact Factor Details
ISSN: 2320-2882 Impact Factor: 7.97 and ISSN APPROVED Journal Starting Year (ESTD) : 2013
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