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GROWTH AND CHARACTERIZATION OF ACTIVATED REFLECTIVE EVAPORATED V2O5
Authors
O.Mahammad Hussain,G. PAKARDIN,P AMEENA
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GROWTH AND CHARACTERIZATION OF V2O5
Abstract
V2O5 with orthorhombic layered structure. The importance of ARE technique an attempt was made to prepare V2O5 thin film at various oxygen partial pressures and substrate temperatures keeping the glow power at 6W. Activated reactive evaporated V2O5 thin films are found to be uniform and well adherent to the substrate surface. It is observed that stoichiometric V2O5 thin films with better crystalline nature and optical properties can be obtained by a proper control of deposition parameters such as substrate temperature and oxygen partial pressure.
The X-ray diffraction pattern of the films deposited in an oxygen partial pressure of 5xl0-4 Torr, and at substrate temperature 523 K, exhibited predominantly (001) orientation with a grain size of about 200 nm. For the films deposited at lower oxygen partial pressures the intensity of (001) peak slightly reduced with a relative growth of hexagonal (h00) orientations. The effect of substrate temperature on the structure of V2O5 films was also studied by keeping oxygen partial pressure at 5x10-4 Torr. The V2O5 films formed at Ts < 423 K were found to be amorphous in nature. The grain size was observed to be increased with increase of substrate temperature.
The IR absorption bands were broad and poorly resolved for the films deposited at a substrate temperature < 473 K. The high frequency IR bands corresponding to symmetric and anti-symmetric vibrations of V=O are observed at1020 cm-l, 992 cm-1 respectively for the films deposited at Ts= 523 K. The IR active modes correspond to V-O-V stretching vibration appeared at 815 cm-1 The effect of oxygen partial pressure and substrate temperature on the optical properties of V2O5 thin films were studied from the optical transmission and reflection data in the wavelength range 350-2500 nm. 5x 10-4 Torr is 2.35 eV. The films prepared at lower oxygen partial pressures (5x 10-4 Torr) exhibited a significant broad band absorption in the near infrared region and the optical absorption edge shifted towards lower energy region indicating the sub stoichiometric nature of the films. There is no significant variation in the optical band gap of V2O5 thin films with substrate temperature.
IJCRT's Publication Details
Unique Identification Number - IJCRT2411267
Paper ID - 271839
Author type - Indian Author
Page Number(s) - c396-c411
Pubished in - Volume 12 | Issue 11 | November 2024
DOI (Digital Object Identifier) - http://doi.one/10.1729/Journal.42323
No Of Downloads - 132
Author Country - India, 518002, kurnool, kurnool, 518002, Physics All
Publisher Name - IJPUBLICATION | www.ijcrt.org | ISSN : 2320-2882
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O.Mahammad Hussain,G. PAKARDIN,P AMEENA, "GROWTH AND CHARACTERIZATION OF ACTIVATED REFLECTIVE EVAPORATED V2O5", International Journal of Creative Research Thoughts (IJCRT), ISSN:2320-2882, Volume.12, Issue 11, pp.c396-c411, November 2024, Available at :http://www.ijcrt.org/papers/IJCRT2411267.pdf
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