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Published Paper Details:
Power Transistors: Design, Applications, and Advancements
Authors
Manu K P
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Keywords
Power Transistors Bipolar Junction Transistors (BJTs) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) Insulated Gate Bipolar Transistors (IGBTs) Silicon Carbide (SiC) Gallium Nitride (GaN)
Abstract
Power transistors are fundamental components in modern electronic systems, playing a critical role in enabling efficient power conversion and control across a wide range of applications. These semiconductor devices are designed to handle high voltages and currents while maintaining reliability and performance, making them indispensable in industries such as automotive, renewable energy, industrial automation, and consumer electronics. This paper provides a comprehensive exploration of the design principles, diverse applications, and recent advancements in power transistor technology, offering insights into their evolving role in shaping the future of electronics. The discussion begins with an overview of the fundamental working principles of power transistors, focusing on the three primary types: bipolar junction transistors (BJTs), metal-oxide-semiconductor field-effect transistors (MOSFETs), and insulated gate bipolar transistors (IGBTs). Each type is analyzed in terms of its unique operating mechanisms, key performance parameters, and suitability for specific applications. BJTs, known for their high current-carrying capabilities, are often used in low-frequency and high-power applications. MOSFETs, with their high-speed switching characteristics, are ideal for power supplies and motor control systems. IGBTs, which combine the advantages of MOSFETs and BJTs, are widely used in high-voltage and high-current applications such as industrial drives and renewable energy systems. The paper also highlights the emergence of wide bandgap materials, such as silicon carbide (SiC) and gallium nitride (GaN), which are revolutionizing the field of power transistors. These materials offer superior thermal conductivity, faster switching speeds, and higher efficiency compared to traditional silicon-based transistors, enabling significant improvements in power conversion systems. The comparative advantages of SiC and GaN are discussed, along with their potential to address the growing demand for energy-efficient and high-performance electronic systems. In addition to exploring the technical aspects of power transistors, the paper delves into their diverse applications. Power transistors are essential components in power conversion systems, including switched-mode power supplies (SMPS) and inverters, where they enable efficient energy conversion and management. In the automotive industry, they play a critical role in electric and hybrid vehicles, facilitating efficient motor drives and battery management systems. In renewable energy systems, power transistors are used in solar inverters and wind turbine converters, contributing to the efficient harnessing and distribution of clean energy.
IJCRT's Publication Details
Unique Identification Number - IJCRT1135906
Paper ID - 276655
Author type - Indian Author
Page Number(s) - 313-324
Pubished in - Volume 6 | Issue 3 | August 2018
DOI (Digital Object Identifier) - http://doi.one/10.1729/Journal.43447
No Of Downloads - 175
Author Country - India, -, -, -, -, Science and Technology
Publisher Name - IJPUBLICATION | www.ijcrt.org | ISSN : 2320-2882
E-ISSN Number - 2320-2882
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Manu K P, "Power Transistors: Design, Applications, and Advancements", International Journal of Creative Research Thoughts (IJCRT), ISSN:2320-2882, Volume.6, Issue 3, pp.313-324, August 2018, Available at :http://www.ijcrt.org/papers/IJCRT1135906.pdf
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