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  Published Paper Details:

  Paper Title

Memristor Ratioed Logic for Low Power Encoder Design

  Authors

  Pramod,  Dr. Mahesh R K

  Keywords

Memristor Ratioed Logic, Low Power Design, Encoder, Combinational Logic Circuits, Memristor.

  Abstract


The emergence of memristor-based digital logic gates presents a promising alternative to conventional IC design paradigms, signaling a new era in computing architecture. Leveraging memristors for logic gate design offers simplicity in manufacturing, as memristors can be integrated atop the poly-silicon gate of NMOS transistors, facilitating increased transistor density on a chip. In this context, this work focuses on the development and analysis of a 3-bit encoder utilizing Memristor Ratioed Logic (MRL), aiming to harness its potential for low-power applications. The proposed encoder design showcases superior power efficiency compared to conventional CMOS designs, positioning it as a compelling solution for energy-conscious computing environments. By employing MRL, the encoder serves as a versatile platform for modeling various combinational logic circuits, demonstrating its efficacy in diverse computational tasks. The primary objective of this work is to design and analyze a 3-bit encoder employing various logical methodologies, utilizing LTspice for simulation and evaluation.

  IJCRT's Publication Details

  Unique Identification Number - IJCRT2406362

  Paper ID - 263604

  Page Number(s) - d331-d343

  Pubished in - Volume 12 | Issue 6 | June 2024

  DOI (Digital Object Identifier) -   

  Publisher Name - IJCRT | www.ijcrt.org | ISSN : 2320-2882

  E-ISSN Number - 2320-2882

  Cite this article

  Pramod,  Dr. Mahesh R K,   "Memristor Ratioed Logic for Low Power Encoder Design", International Journal of Creative Research Thoughts (IJCRT), ISSN:2320-2882, Volume.12, Issue 6, pp.d331-d343, June 2024, Available at :http://www.ijcrt.org/papers/IJCRT2406362.pdf

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ISSN: 2320-2882
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Journal Starting Year (ESTD) : 2013
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ISSN and 7.97 Impact Factor Details


ISSN
ISSN
ISSN: 2320-2882
Impact Factor: 7.97 and ISSN APPROVED
Journal Starting Year (ESTD) : 2013
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