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  Published Paper Details:

  Paper Title

Next-Gen Power Solutions: Unleashing The Potential Of Advance Leakage Methods In CMOS VLSI Circuits

  Authors

  Veena Vijayan

  Keywords

Power reduction, VLSI, leakage, CMOS, leakage current, transistor

  Abstract


As semiconductor technology advances, the escalating demand for efficient power consumption in electronic devices, especially mobile gadgets, has become paramount. In pursuit of low-power circuits, this study explores various techniques, including the proposed Advance Leakage Method, to mitigate power loss, emphasizing the critical issue of leakage power, which can contribute up to 50% of overall power consumption. The study examines the dissipation of power due to leakage in VLSI circuits. A comprehensive analysis of leakage reduction methods, such as the Stack Technique, LECTOR Technique, Source Biasing Approach, Stack ONOFIC Approach, and the Proposed Approach, is presented. The study employs CMOS inverter models, revealing a significant reduction in leakage power by 50%, demonstrating the efficacy of the proposed method. The results, including power consumption and propagation time for various circuits and techniques, are tabulated and discussed, providing valuable insights for future low-power VLSI circuit designs.

  IJCRT's Publication Details

  Unique Identification Number - IJCRT2312010

  Paper ID - 247118

  Page Number(s) - a72-a82

  Pubished in - Volume 11 | Issue 12 | December 2023

  DOI (Digital Object Identifier) -   

  Publisher Name - IJCRT | www.ijcrt.org | ISSN : 2320-2882

  E-ISSN Number - 2320-2882

  Cite this article

  Veena Vijayan,   "Next-Gen Power Solutions: Unleashing The Potential Of Advance Leakage Methods In CMOS VLSI Circuits", International Journal of Creative Research Thoughts (IJCRT), ISSN:2320-2882, Volume.11, Issue 12, pp.a72-a82, December 2023, Available at :http://www.ijcrt.org/papers/IJCRT2312010.pdf

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ISSN: 2320-2882
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ISSN and 7.97 Impact Factor Details


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ISSN: 2320-2882
Impact Factor: 7.97 and ISSN APPROVED
Journal Starting Year (ESTD) : 2013
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