Published Paper Details:

Consider the energy-band diagram of the n-p-n bipolar transistor in the forward active mode, at which the emitter-base junction is forward biased and the collector-base junction is reverse biased. The forward-biased junction voltage reduces the potential barrier at the emitter-base junction and triggers the injection of electrons from the emitter to the base. The reduced potential barrier also helps holes diffuse through the forward-biased emitter-base junction into the emitter region. The supply of electrons at the emitter contact provides the emitter current, and the supply of holes at the base contact results in the base current. Since the collector junction is reverse biased, the energy band bends down and prevents hole injection from the base to the collector. The electrons injected into the base, however, are assisted by the field in the collector-base depletion region and are swept to the collector. The collection of electrons at the collector contact gives rise to the collector current has been undertaken to investigate