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  Published Paper Details:

  Paper Title

TERNARY D-LATCH LOGIC IMPLEMENTATION USING GRAPHENE NANO RIBBON FIELD EFFECT TRANSISTOR

  Authors

  Vydya Ram Prasad,  G Ravi Kishore

  Keywords

GNRFET, NTI, Ternary, D-Latch

  Abstract


Multi Valued Logic (MVL) presents a better information density as compared to a Boolean system. MVL is subdivided into ternary, quaternary, quinary etc. The ternary logical system is the maximum possible MVL system and may be utilized by the studies network because of its simplicity and difference among distinctive logical stages. More discrete voltage stages are required to pick out distinctive logic values over the range i.e., 0 to 1.2V. Ternary logic became initially applied in Complementary Metal Oxide Semiconductor CMOS (Complementary Metal Oxide Semiconductor) era however this introduces short channel effects, scaling limitations, Drain-induced barrier lowering DIBL (Drain Induced Barrier Lowering), and power consumption. So, a brand-new era has appeared specifically carbon-based field effect transistors. CNTFET (Carbon Nanotube Field Effect Transistor) and GNRFET (Graphene Nano Ribbon Field Effect Transistor) are kinds of carbon transistors. In this paper we are using the GNRFET in place of CMOS technology. We can design the proposed logic with using the one NTI (Negative Ternary Inverter), and Four NAND gates. To achieve the calculation of performance parameters we use the HSPICE 16 nm technology

  IJCRT's Publication Details

  Unique Identification Number - IJCRT2211023

  Paper ID - 227076

  Page Number(s) - a201-a207

  Pubished in - Volume 10 | Issue 11 | November 2022

  DOI (Digital Object Identifier) -   

  Publisher Name - IJCRT | www.ijcrt.org | ISSN : 2320-2882

  E-ISSN Number - 2320-2882

  Cite this article

  Vydya Ram Prasad,  G Ravi Kishore,   "TERNARY D-LATCH LOGIC IMPLEMENTATION USING GRAPHENE NANO RIBBON FIELD EFFECT TRANSISTOR", International Journal of Creative Research Thoughts (IJCRT), ISSN:2320-2882, Volume.10, Issue 11, pp.a201-a207, November 2022, Available at :http://www.ijcrt.org/papers/IJCRT2211023.pdf

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ISSN: 2320-2882
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ISSN and 7.97 Impact Factor Details


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ISSN: 2320-2882
Impact Factor: 7.97 and ISSN APPROVED
Journal Starting Year (ESTD) : 2013
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