Published Paper Details:

The Chalcogenide compounds of group V-VI-VII have attracted the minds of researchers due to their multifunctional properties. They exhibit many rare combinations of strongly coupled photoconductive, semiconductive, Pyroelectric and ferroelectric properties which have been subjects of much recent interest. SbSI is one of most extensively studies compound of this series. It is expected that introduction of impurities may lead to some constructive changes in the properties of the compound. Therefore, synthesis of doped SbSI and SbTeI was carried with solid state thermal reaction technique. Tin and Indium were the two dopants introduced in place of Antimony and Sulfur. Composition of the elements present in each of these materials was examined by EDAX. The electrical conductivities of the doped materials were compared with the pure SbSI material. The dielectric constants of the samples were calculated using the capacitance of the material.