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  Published Paper Details:

  Paper Title

SEQUENTIAL CIRCUIT IMPLEMENTATION USING ELECTRON TUNNELING AND TLG TECHNOLOGY

  Authors

  ANUP KUMAR BISWAS

  Keywords

Keywords: Electron-tunneling, XOR, T Flip-flop, Coulomb-blockade, sequential circuit

  Abstract


ABSTRACT The two types of devices, Single Electron tunneling devices (SEDs) and Threshold Logic Gates (TLGs), both have the power of controlling the transport of an electron through a tunnel junction at a certain time. A single electron has the charge which is adequate to store an information in a SED. The switching delay of a Threshold Logic Gate is very small and speed of the processing of TLG based devices will be in the order of? 10?^9. For implementing logic gates and a sequential circuit, TLG, of course, will be a best candidate to fulfill the necessities. When an Ultra-low noise is considered, TLG based circuit will be the best selection for implementing our desired tunneling circuits. Different TLGs like 2-input AND/NAND, 2-input XOR/XNOR, RS Flip-flop, T-Flip-flop have been implemented with the help of concept of linearly separable threshold logic gate of multiple inputs. Almost in every instances, the threshold logic equations, Truth tables and simulated results for them are provided in parallel in due places.

  IJCRT's Publication Details

  Unique Identification Number - IJCRT2106758

  Paper ID - 209343

  Page Number(s) - g385-g400

  Pubished in - Volume 9 | Issue 6 | June 2021

  DOI (Digital Object Identifier) -   

  Publisher Name - IJCRT | www.ijcrt.org | ISSN : 2320-2882

  E-ISSN Number - 2320-2882

  Cite this article

  ANUP KUMAR BISWAS,   "SEQUENTIAL CIRCUIT IMPLEMENTATION USING ELECTRON TUNNELING AND TLG TECHNOLOGY", International Journal of Creative Research Thoughts (IJCRT), ISSN:2320-2882, Volume.9, Issue 6, pp.g385-g400, June 2021, Available at :http://www.ijcrt.org/papers/IJCRT2106758.pdf

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ISSN: 2320-2882
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Journal Starting Year (ESTD) : 2013
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ISSN and 7.97 Impact Factor Details


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ISSN: 2320-2882
Impact Factor: 7.97 and ISSN APPROVED
Journal Starting Year (ESTD) : 2013
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