Published Paper Details:

This paper investigates the potential use of wurtzite Indium Gallium Nitride as photovoltaic material. Silvaco Atlas was used to simulate a quad-junction solar cell. Each of the junctions was made up of Indium Gallium Nitride. The band gap of each junction was dependent on the composition percentage of Indium Nitride and Gallium Nitride within Indium Gallium Nitride. The findings of this research show that Indium Gallium Nitride is a promising semiconductor for solar cell use. In this work, Double Layer BSF is used for top cell with their varying thickness on GaInP / GaA DJ Solar Cell, using Computational Numerical Modeling TCAD Tool Silvaco Atlas. The objectives of this paper is to simulate electrical and optical characteristics the of these devices and extract the figures of merits like efficiency, open circuit voltage, short circuit current and fill factor and to study the effect of variation of doping concentration dimensions of the device and thickness of active layer on the figures of merits.