Published Paper Details:

One of the most widely used electronic devices,particularly in digital integrated circuits, is the metal insulator semiconductor(MIS) transistor. In this device the channel current is controlled by a voltage applied at a gate electrode that is isolated from the channel by an insulator.The resulting device may be referred to generically as an insulated gate field effect transistor(IGFET).The main drives for reducing the size of the transistors, i.e., their lengths, is increasing speed and reducing cost. When you make circuits smaller, their capacitance reduces, thereby increasing operating speed. In the same token, smaller circuits allow more of them in the same wafer, dividing the total cost of a single wafer among more dies.However, with great reduction come great problems, in this case in the form of unwanted side effects, the so called short-channel effects. When the channel of the MOSFET becomes the same order of magnitude as the depletion layer width of source and drain, the transistors start behaving differently, which impacts performance, modeling and reliability.