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  Published Paper Details:

  Paper Title

MODELING AND SIMULATION OF TIO2/GAAS SOLAR CELL USING SCAPS

  Authors

  Priti M Oza,  Dr.Nimish H Vasoya

  Keywords

TiO2/GaAs solar cells, Thin film solar cell, SCAPS-1D, Simulation

  Abstract


To generate electricity, solar cells use either photovoltaic effects or chemical reactions to transform solar energy into heat or chemical power. Solar panels are made up of cell configurations that are used to create solar modules that gather energy from the sun. Processes for large-scale production that can be scaled up A flexible, semi-transparent, and low-cost organic solar cell (OSC) is a promising alternative to traditional photovoltaic cells. The effect of solar-cell thinness and doping concentration on the cell characteristics of TiO2 and GaAs photovoltaic cells was investigated with the use of SCAPS. However, these cells' performance of power transmission remains modest. We ran simulations of n-TiO2/p-GaAs using the SCAPS-1D software. Thin-film solar cells made of n-TiO2/p-GaAs. We assessed a few certain n-TiO2/p-GaAs thermal impact, phase density at the interface, metal work function and other heterojunction factors and Cross-section of electron and hole capture. Our findings demonstrate that raising the density of states of p-type GaAs layers and decreasing user's metal casting functionality can improve the performance of n-TiO2/p-GaAs solar cells. Our findings also show that the best design includes TiO2 as a buffer layer, GaAs as an absorber, and thicknesses of x = 2?m, 4?m, 6?m, 8?m, 10?m, 12?m, 14?m, 16?m and 18?m doped with a concentration of 1.00E+17 cm-3 for all compositions. These solar-cells have a performance of 24.99 %, which is potentially higher than what was previously achieved in the Solar-cell research.

  IJCRT's Publication Details

  Unique Identification Number - IJCRT2212610

  Paper ID - 229339

  Page Number(s) - f344-f350

  Pubished in - Volume 10 | Issue 12 | December 2022

  DOI (Digital Object Identifier) -   

  Publisher Name - IJCRT | www.ijcrt.org | ISSN : 2320-2882

  E-ISSN Number - 2320-2882

  Cite this article

  Priti M Oza,  Dr.Nimish H Vasoya,   "MODELING AND SIMULATION OF TIO2/GAAS SOLAR CELL USING SCAPS", International Journal of Creative Research Thoughts (IJCRT), ISSN:2320-2882, Volume.10, Issue 12, pp.f344-f350, December 2022, Available at :http://www.ijcrt.org/papers/IJCRT2212610.pdf

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ISSN: 2320-2882
Impact Factor: 7.97 and ISSN APPROVED
Journal Starting Year (ESTD) : 2013
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ISSN and 7.97 Impact Factor Details


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ISSN
ISSN: 2320-2882
Impact Factor: 7.97 and ISSN APPROVED
Journal Starting Year (ESTD) : 2013
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