Published Paper Details:

ABSTRACT Single Electron tunneling based threshold gate is one approach by that we can implement all logic gates, sequential and combinational circuits. Threshold Logic Gates (TLGs) and Single Electron tunneling devices (SEDs) keep the capabilities of controlling the transport of an electron through a tunnel junction at a particular time. A single electron containing the charge is adequate to store an information in a SED. Power required in the single electron tunneling circuits is low in comparison with the (CMOS) circuits. The processing delay is very low and speed of the processing of TLG based devices will be close to electronic speed. The single-electron transistor (SET) and TLG are attracting scientists, technologists and researchers to design and implement for the consuming of ultra-low power and their small sizes. All tunneling events in a TLG-based circuit happen when only a single electron tunnels from one conductor to other through the tunnel junction when the proper voltages are applied. For implementing logic gates, Full adder and a binary-cum-BCD adder, TLG would be a best candidate to fulfill the necessities requiring their implementations. So far as an Ultra-low noise is concerned, TLG based circuit can be considered as a best selection for implementing the desired tunneling circuits. Different TLGs like 2-input AND, 3-input OR, Full adder, and a binary-cum-BCD adder have been implemented by using linear threshold logic gates or devices. Threshold network, truth table and simulated results of them are given in parallel in due places.