Published Paper Details:

Nanostructured material has drawn huge attention due to their attractive photo detection properties. Compare with other materials ZnO has much importance in the device fabrication purpose due to its direct wide band gap of ~ 3.3ev, large excitation binding energy of ~ 60mv at room temperature and high electron mobility. Many works have been reported that use ZnO for the purpose of UV photodetectors. This thesis presents the simulation studies of ZnO based Ultraviolet (UV) Photo-Transistor with and without plasmonic. By using plasmonics the output current increase by a factor of 100, It also improve the source photo current and sensitivity. The simulations were carried out using ATLAS software. The material used in this project is ZnO with a doping concentration of 10^17/cm^3.The plasmonic layer was of platinum nanoparticles. The photodetector was irradiated with intensity of 550 mW/cm^2 UV radiation of wavelength 350nm. The output currents of ZnO based UV Photo Transistors with and without plasmonic layer were found to be 1.2755�10^-5A and 3.048�10^-7A respectively. And the maximum responsivity of the devices was found to be 0.0654mA/W and 0.18????A/W with and without plasmonic layer; respectively it was also observed that there is an appreciable increase (factor of 100) in source photo current in devices with a plasmonic layer.