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INTERNATIONAL JOURNAL OF CREATIVE RESEARCH THOUGHTS - IJCRT (IJCRT.ORG)
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ISSN Approved Journal No: 2320-2882 | Impact factor: 7.97 | ESTD Year: 2013
Call For Paper - Volume 12 | Issue 5 | Month- May 2024
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Paper Title
INGAAS TUNNEL FIELD EFFECT TRANSISTOR WITH HIGH-K GATE DIELECTRIC
Authors
Sawan Gupta
Keywords
TFET, Band to band tunneling (BTBT), Subthreshold swing (SS), Single Gate TFET, DIBL, ON current (ION) and OFF current (IOFF)
Abstract
Tunnel Field Effect Transistor is considered as a very promising device for ultra-low power applications because of its steep sub-threshold slope prospects. The carrier injection mechanism in Tunnel Field Effect Transistor is band-to-band tunneling which reduces the leakage current because of high tunnel barrier width. Silicon as a Tunnel Field Effect Transistor channel material limits the thermal conductance, transit time and switching energy because of its high and indirect band gap. So, III-V direct and small band gap materials such as InGaAs, InAs, GaSb etc. are used to improve performance of the device. In this paper, Tunnel Field Effect Transistor using In0.53Ga0.47As as channel material and high-k dielectric for gate using Cogenda Visual TCAD is presented. The proposed device showed better threshold voltage, DIBL and subthreshold swing as compared to MOSFET.
IJCRT's Publication Details
Unique Identification Number - IJCRT1704296
Paper ID - 170815
Page Number(s) - 2299-2307
Pubished in - Volume 5 | Issue 4 | December 2017
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Publisher Name - IJCRT | www.ijcrt.org | ISSN : 2320-2882
E-ISSN Number - 2320-2882
Cite this article
Sawan Gupta, "INGAAS TUNNEL FIELD EFFECT TRANSISTOR WITH HIGH-K GATE DIELECTRIC", International Journal of Creative Research Thoughts (IJCRT), ISSN:2320-2882, Volume.5, Issue 4, pp.2299-2307, December 2017, Available at :http://www.ijcrt.org/papers/IJCRT1704296.pdf
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ISSN: 2320-2882 Impact Factor: 7.97 and ISSN APPROVED Journal Starting Year (ESTD) : 2013
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ISSN: 2320-2882 Impact Factor: 7.97 and ISSN APPROVED Journal Starting Year (ESTD) : 2013
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